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Abstract Emerging non-volatile memristor-based devices with resistive switching (RS) materials are being widely researched as promising contenders for the next generation of data storage and neuromorphic technologies. Titanium nitride (TiN_x) is a common industry-friendly electrode system for RS; however, the precise TiN_xproperties required for optimum RS performance is still lacking. Herein, using ion-assisted DC magnetron sputtering, we demonstrate the key importance not only of engineering the TiN_xbottom electrodes to be dense, smooth, and conductive, but also understoichiometric in N. With these properties, RS in HfO₂-based memristive devices is shown to be optimised for TiN_0.96. These devices have switching voltages ≤ ±1 V with promising device-to-device uniformity, endurance, memory window of ~40, and multiple non-volatile intermediate conductance levels. This study highlights the importance of precise tuning of TiN_xbottom electrodes to achieve robust performance of oxide resistive switching materials.